| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Numerical and Experimental Study on the Device Geometry Dependence of Performance of Heterjunction Phototransistors |
| Jin-Lei Lu1,2, Chen Yue1,2, Xuan-Zhang Li1,2, Wen-Xin Wang1,2, Hai-Qiang Jia1,2,3, Hong Chen1,2,3, Lu Wang1,2** |
1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049
3Songshan Lake Materials Laboratory, Dongguan 523808
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| Cite this article: |
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Jin-Lei Lu, Chen Yue, Xuan-Zhang Li et al 2019 Chin. Phys. Lett. 36 108501 |
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Abstract Heterojunction phototransistors (HPTs) with scaling emitters have a higher optical gain compared to HPTs with normal emitters. However, to quantitatively describe the relationship between the emitter-absorber area ratio ($A_{\rm e}/A_{\rm a}$) and the performance of HPTs, and to find the optimum value of $A_{\rm e}/A_{\rm a}$ for the geometric structure design, we develop an analytical model for the optical gain of HPTs. Moreover, five devices with different $A_{\rm e}/A_{\rm a}$ are fabricated to verify the numerical analysis result. As is expected, the measurement result is in good agreement with the analysis model, both of them confirmed that devices with a smaller $A_{\rm e}/A_{\rm a}$ exhibit higher optical gain. The device with area ratio of 0.0625 has the highest optical gain, which is two orders of magnitude larger than that of the device with area ratio of 1 at 3 V. However, the dark current of the device with the area ratio of 0.0625 is forty times higher than that of the device with the area ratio of 1. By calculating the signal-to-noise ratios (SNRs) of the devices, the optimal value of $A_{\rm e}/A_{\rm a}$ can be obtained to be 0.16. The device with the area ratio of 0.16 has the maximum SNR. This result can be used for future design principles for high performance HPTs.
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Received: 12 July 2019
Published: 21 September 2019
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| PACS: |
85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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85.40.Qx
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(Microcircuit quality, noise, performance, and failure analysis)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11574362, 61210014, 11374340 and 11474205, the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission under Grant No Z151100003515001, and the National Key Technology R&D Program of China under Grant No 2016YFB0400302. |
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