| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates |
| Yi Gu1,2,6, Hui-Jun Zheng3, Xi-Ren Chen4, Jia-Ming Li2, Tian-Xiao Nie5, Xu-Feng Kou1,2** |
1Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2School of Information Science and Technology, ShanghaiTech University, Shanghai 201210
3School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210
4Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083
5Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University, Beijing 100191
6University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Yi Gu, Hui-Jun Zheng, Xi-Ren Chen et al 2018 Chin. Phys. Lett. 35 086801 |
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Abstract We report the epitaxial growth of single-crystalline CdTe(100) thin films on GaAs(100) substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three different reconstructed surfaces are realized, and their influence on the subsequent CdTe growth is investigated. More importantly, we find that both the presence of a thin native oxide layer and the formation of Ga-As-Te bonds at the interface enable the growth along the (100) orientation and help to reduce the threading dislocations and other defects. Our results provide new opportunities for compound semiconductor heterogeneous growth via interfacial engineering.
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Received: 19 March 2018
Published: 15 July 2018
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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78.55.Et
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(II-VI semiconductors)
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78.55.-m
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(Photoluminescence, properties and materials)
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