CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al$_{2}$O$_{3}$ Nanocomposite Films Based on IDC and SAXS |
Yuan-Yuan Liu1,2, Jing-Hua Yin1**, Xiao-Xu Liu1, Duo Sun1, Ming-Hua Chen1, Zhong-Hua Wu3, Bo Su1 |
1Key Laboratory of Engineering Dielectric and Its Applications (Ministry of Education), Harbin University of Science and Technology, Harbin 150080 2Harbin Cambridge College, Harbin 150069 3Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
|
|
Cite this article: |
Yuan-Yuan Liu, Jing-Hua Yin, Xiao-Xu Liu et al 2017 Chin. Phys. Lett. 34 048201 |
|
|
Abstract The distributions of traps and electron density in the interfaces between polyimide (PI) matrix and Al$_{2}$O$_{3}$ nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering (SAXS) tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al$_{2}$O$_{3}$ nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is $1.054\times10^{22}$ eV$\cdot$m$^{-3}$ at 1.324 eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al$_{2}$O$_{3}$ contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.
|
|
Received: 03 November 2016
Published: 21 March 2017
|
|
PACS: |
82.35.Np
|
(Nanoparticles in polymers)
|
|
82.35.Gh
|
(Polymers on surfaces; adhesion)
|
|
68.35.Ct
|
(Interface structure and roughness)
|
|
|
Fund: Supported by the National Natural Science Foundation of China under Grant Nos 51337002, 51077028, 51502063 and 51307046, and the Foundation of Harbin Science and Technology Bureau of Heilongjiang Province under Grant No RC2014QN017034. |
|
|
[1] | Modesti M, Lorenzetti A, Bon D and Besco S 2005 Polymer 46 10237 | [2] | Khun N W, Loong P Y, Liu E J and Li L 2015 J. Polym. Eng. 35 23 | [3] | Tsai M H, Wang H Y, Lu H T, Tseng I H, Lu H H, Huang S L and Yeh J M 2011 Thin Solid Films 519 4969 | [4] | Ma P C, Nie W, Yang Z H, Zhang P H, Li G, Lei Q Q, Gao L X, Ji X L and Ding M X 2008 J. Appl. Polym. Sci. 108 705 | [5] | Feng Y, Yin J H, Chen M H and Lei Q Q 2014 IEEE Trans. Dielectr. Electr. Insul. 21 1501 | [6] | Tian F Q, Lei Q Q, Wang X and Wang Y 2011 Appl. Phys. Lett. 99 142903 | [7] | Zhang P H, Fan, Y, Wang, F C, Xie H, Li G and Lei Q Q 2005 Chin. Phys. Lett. 22 1253 | [8] | Lewis T J 2005 J. Phys. D 38 202 | [9] | Liu X X and Yin J H 2010 Chin. Phys. Lett. 27 096103 | [10] | Tanaka T, Kozako M, Fuse N and Ohki Y 2005 IEEE Trans. Dielectr. Electr. Insul. 12 669 | [11] | Mazzanti G, Montanari G C and Alison J M 2003 IEEE Trans. Dielectr. Electr. Insul. 10 187 | [12] | Alison J M, Mazzanti G, Montanari G C and Palmieri F 2002 Annu. Report Conf. Electr. Insulation Dielectric Phenom. (Cancun Mexico 20–24 October 2002) p 35 | [13] | O' Konski C T 1960 J. Phys. Chem. 64 605 | [14] | Watson P K 1998 IEEE Trans. Dielectr. Electr. Insul. 5 21 | [15] | Wang X, Chen S Q, Cheng X and Tu D M 2009 Proc. CSEE 29 128 | [16] | Tanaka T 2006 IEEE Conf. Electr. Insulation Dielectric Phenom. (Kansas USA 15–18 October 2006) p 298 | [17] | Du B X, Li J and Du W IEEE Trans. Dielectr. Electr. Insul. 20 1764 % | [18] | Yan G Y, Tian Q, Lui J H Chen B, Sun G A, Huang M and Li X H 2014 Chin. Phys. B 23 076101 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|