| PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
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Growth of Single-Crystalline Silicon Nanocone Arrays by Plasma Sputtering Reaction Deposition |
| Zhi-Cheng Wu, Lei-Lei Guan, Hui Li, Jia-Da Wu, Jian Sun, Ning Xu**, |
Department of Optical Science and Engineering, Fudan University, Shanghai 200433
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| Cite this article: |
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Zhi-Cheng Wu, Lei-Lei Guan, Hui Li et al 2017 Chin. Phys. Lett. 34 025202 |
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Abstract Vertically aligned single-crystalline silicon nanocone (Si-NC) arrays are grown on nickel-coated silicon (100) substrates by a novel method i.e., abnormal glow-discharge plasma sputtering reaction deposition. The experimental results show that the inlet CH$_{4}$/(N$_{2}$+H$_{2}$) ratio has great effects on the morphology of the grown Si-NC arrays. The characterization of the morphology, crystalline structure and composition of the grown Si-NCs indicates that the Si-NCs are grown epitaxially in the vapor–liquid–solid mode. The analyses of optical emission spectra further reveal that the inlet methane can promote the growth of Si-NCs by raising the plasma temperature and enhancing the ion-sputtering. The understanding of the growth mechanism of the Si-NC arrays will be helpful for fabrication of required Si-NC arrays.
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Received: 27 October 2016
Published: 25 January 2017
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| PACS: |
52.80.Tn
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(Other gas discharges)
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81.15.Cd
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(Deposition by sputtering)
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82.33.Xj
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(Plasma reactions (including flowing afterglow and electric discharges))
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| Fund: Supported by the National Basic Research Program of China under Grant No 2012CB934303, the Natural Science Foundation of Shanghai under Grant No 15ZR1403300 and the National Natural Science Foundation of China under Grant No 11275051. |
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