| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Thickness and Temperature on Thermoelectric Properties of Bi$_{2}$Te$_{3}$-Based Thin Films |
| Dong-Dong Yang1,2, Hao Tong1,2, Ling-Jun Zhou1,2, Xiang-Shui Miao1,2** |
1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074
2School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
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| Cite this article: |
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Dong-Dong Yang, Hao Tong, Ling-Jun Zhou et al 2017 Chin. Phys. Lett. 34 127301 |
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Abstract Bi$_{2}$Te$_{3}$ thin films and GeTe/B$_{2}$Te$_{3}$ superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573 K for 30 min. Thermoelectric (TE) measurements indicate that optimal thickness and thickness ratio improve the TE performance of Bi$_{2}$Te$_{3}$ thin films and GeTe/B$_{2}$Te$_{3}$ superlattices, respectively. High TE performances with figure-of-merit ($ZT$) values as high as 1.32 and 1.56 are achieved at 443 K for 30 nm and 50 nm Bi$_{2}$Te$_{3}$ thin films, respectively. These $ZT$ values are higher than those of p-type Bi$_{2}$Te$_{3}$ alloys as reported. Relatively high $ZT$ of the GeTe/B$_{2}$Te$_{3}$ superlattices at 300–380 K were 0.62–0.76. The achieved high $ZT$ value may be attributed to the unique nano- and micro-structures of the films, which increase phonon scattering and reduce thermal conductivity. The results indicate that Bi$_{2}$Te$_{3}$-based thin films can serve as high-performance materials for applications in TE devices.
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Received: 18 July 2017
Published: 24 November 2017
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| PACS: |
73.50.Lw
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(Thermoelectric effects)
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68.60.Dv
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(Thermal stability; thermal effects)
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72.20.Pa
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(Thermoelectric and thermomagnetic effects)
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73.61.-r
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(Electrical properties of specific thin films)
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84.60.Bk
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(Performance characteristics of energy conversion systems; figure of merit)
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