| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor |
| Pei Li1, Chao-Hui He1**, Gang Guo2, Hong-Xia Guo3, Feng-Qi Zhang3, Jin-Xin Zhang1, Shu-Ting Shi2 |
1School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049
2China Institute of Atomic Energy, Beijing 102413
3Northwest Institution of Nuclear Technology, Xi'an 710024
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| Cite this article: |
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Pei Li, Chao-Hui He, Gang Guo et al 2017 Chin. Phys. Lett. 34 108501 |
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Abstract Silicon-germanium (SiGe) hetero-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.
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Received: 15 June 2017
Published: 27 September 2017
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| PACS: |
85.30.Pq
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(Bipolar transistors)
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61.80.Az
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(Theory and models of radiation effects)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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61.80.-x
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(Physical radiation effects, radiation damage)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61274106 and 61574171. |
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