| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Structural Design and Experiment of Narrow-Band Response GaAlAs Photocathodes |
| Jing Zhao1**, Jian Zhang1, Cui Qin1, Hui-Long Yu1, Yi-Jun Zhang2, Xin-Long Chen2, Ben-Kang Chang2 |
1School of Communication Engineering, Nanjing Institute of Technology, Nanjing 211167
2Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094
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| Cite this article: |
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Jing Zhao, Jian Zhang, Cui Qin et al 2016 Chin. Phys. Lett. 33 027801 |
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Abstract To obtain the peak response at 532 nm, narrow-band response GaAlAs photocathodes with two GaAlAs active layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition. The results indicate that the peak response and the cut-off wavelength occur at 532 nm for the two kinds of photocathodes respectively. The response of the reflection-mode photocathode is an order of magnitude higher than that of the transmission-mode photocathode, whereas the better growth quality and the thicker second GaAlAs active layer can improve the transmission-mode response.
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Received: 15 September 2015
Published: 26 February 2016
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| PACS: |
78.40.Fy
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(Semiconductors)
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79.60.Dp
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(Adsorbed layers and thin films)
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78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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