| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O$_{3}$ Thin Films |
| Jun Jiang, An-Quan Jiang** |
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433
|
|
| Cite this article: |
|
Jun Jiang, An-Quan Jiang 2016 Chin. Phys. Lett. 33 027701 |
|
|
|
|
Abstract The traditional imprint characterization of ferroelectric thin films estimates imprint time dependence of the mean coercive voltage of all domains from a polarization-voltage hysteresis loop, which shows a semilogarithmic time dependence above an initial imprint time of $\tau _{0}> 1$ μs at room temperature. Below $\tau _{0}$, the imprint effect is believed to be weak. In consideration of region-by-region domain reversal under a rising pulsed voltage with ordered coercive voltages increasing from zero up to the maximum applied voltage during capacitor charging time, we can estimate the imprinted coercive voltage of each domain from domain switching current transient separately with imprint time as short as 20 ns. In disagreement with the previous observations, all imprinted coercive voltages for the domains in Pt/Pb(Zr$_{0.4}$Ti$_{0.6})$O$_{3}$/Pt thin-film capacitors show step-like increases at two characteristic times of 300 ns and 0.27 s. The imprint effect is surprisingly strong enough even at shortened time down to 20 ns without any evidence of weakening.
|
|
|
Received: 02 December 2015
Published: 26 February 2016
|
|
| PACS: |
77.55.fg
|
(Pb(Zr,Ti)O3-based films)
|
| |
77.80.Fm
|
(Switching phenomena)
|
| |
73.40.-c
|
(Electronic transport in interface structures)
|
|
|
|
|
|
[1] Warren W L, Al-Shareef H N, Dimos D and Tuttle B A 1996 Appl. Phys. Lett. 68 1681
[2] Grossmann M, Lohse O, Bolten D, Boettger U, Schneller T and Waser W 2002 J. Appl. Phys. 92 2680
[3] Grossmann M, Lohse O, Bolten D, Boettger U and Waser R 2002 J. Appl. Phys. 92 2688
[4] Jiang A Q and Tang T A 2009 Chin. Phys. Lett. 26 017701
[5] Kang B S, Yoon J G, Kim D J and Noh T W 2003 Appl. Phys. Lett. 82 2124
[6] Tagantsev A K, Stolichnov I and Setter N 2004 J. Appl. Phys. 96 6616
[7] Schorn P, Ellerkmann U, Bolten D, Boettger U and Waser R 2003 Intgr. Ferroelectr. 53 361
[8] Jiang A Q, Lin Y Y and Tang T A 2007 Appl. Phys. Lett. 91 202906
[9] Jiang A Q, Yu H H and Tang T A 2009 Appl. Phys. Lett. 94 202904
[10] Jiang A Q, Chen Z H, Hui W Y, Wu D P and Scott J F 2012 Adv. Funct. Mater. 22 2148
[11] Jiang A Q, Lee H J, Hwang C S and Scott J F 2012 Adv. Funct. Mater. 22 192
[12] Jiang A Q, Lin Y Y and Tang T A 2006 Appl. Phys. Lett. 89 32906 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
