| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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High-Power Passively Q-Switched Nd:YAG Laser at 1112nm with a Cr$^{4+}$:YAG Saturable Absorber |
| Yang-Yang Dun, Ping Li**, Xiao-Han Chen, Bao-Min Ma |
| School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100 |
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| Cite this article: |
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Yang-Yang Dun, Ping Li, Xiao-Han Chen et al 2016 Chin. Phys. Lett. 33 024201 |
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Abstract A high-power passively Q-switched Nd:YAG laser operating at 1112 nm with Cr$^{4+}$:YAG as a saturable absorber is demonstrated. Under 808 nm diode-direct pumping, the maximum average output power of 2.73 W is achieved at the pump power of 16.65 W, corresponding to an optical-to-optical conversion efficiency of 16.4%. At the same time, the pulse width, pulse repetition rate, single pulse energy and peak power are 27.2 ns, 9 kHz, 303.3 µJ and 11.2 kW, respectively. As far as we know, the result gives the highest average output power at 1112 nm generated by an 808 nm diode-end-pumped Nd:YAG laser.
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Received: 06 November 2015
Published: 26 February 2016
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