CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Time-Resolved Photoluminescence Study of Silicon Nanoporous Pillar Array |
WANG Xiao-Bo1,2, YAN Ling-Ling1,3, LI Yong4, LI Xin-Jian1** |
1Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 2School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 3College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 4Department of Physics, Pingdingshan University, Pingdingshan 467000
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Cite this article: |
WANG Xiao-Bo, YAN Ling-Ling, LI Yong et al 2015 Chin. Phys. Lett. 32 097802 |
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Abstract A silicon nanoporous pillar array (Si-NPA) is thought to be a promising functional substrate for constructing a variety of Si-based optoelectronic nanodevices, due to its unique hierarchical structure and enhanced physical properties. This makes the in-depth understanding of the photoluminescence (PL) of Si-NPA crucial for both scientific research and practical applications. In this work, the PL properties of Si-NPA are studied by measuring both the steady-state and time-resolved PL spectrum. Based on the experimental data, the three PL bands of Si-NPA, i.e., the ultraviolet band, the purple-blue plateau and the red band are assigned to the oxygen-excess defects in Si oxide or silanol groups at the surface of Si nanocrystallites (nc-Si), oxygen deficiency defects in Si oxide, and band-to-band transition of nc-Si under the frame of quantum confinement combining with the surface states like Si=O and Si–O–Si bonds at the surface of nc-Si, respectively. These results may provide some novel insight into the PL process of Si-NPA and may be helpful for clarifying the PL mechanism.
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Received: 17 February 2015
Published: 02 October 2015
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