| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Controlling Factors of the Electric Field at the Triple Junction |
| LIU Yang1,2**, HUANG Xu-Dong1, FENG Yu-Jun1, HE Hong-Liang2 |
1Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049
2National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900
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| Cite this article: |
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LIU Yang, HUANG Xu-Dong, FENG Yu-Jun et al 2014 Chin. Phys. Lett. 31 027701 |
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Abstract The metal-dielectric-vacuum junction is defined as the triple junction owned enhanced electric field, thus this special region is regarded as the location where primary electrons emission is favored. For electron emission, triple junction could affect both the flashover breakdown of insulators and the electron emission property of ferroelectric cathodes. In this study, we theoretically investigate the electric field enhancement in the triple-junction region. It is found that the key parameter to determine the field enhancement is the taper angle of the electrode and the relative permittivity of the dielectric. In addition, we first deduce the accurate expression of the electric field in this special region. The controlling parameters for determining the field enhancement are discussed in detail. We also discover the way to reduce the electric field of this region through simulation. The current analysis would be useful for both the electron emission enhancement and the issue of flashover breakdown.
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Received: 13 June 2013
Published: 28 February 2014
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| PACS: |
77.65.-j
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(Piezoelectricity and electromechanical effects)
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73.40.Sx
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(Metal-semiconductor-metal structures)
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79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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[1] Miller H C 1989 Electr. Insulation IEEE Trans. 24 765
[2] Puchkarev V F and Mesyats G A 1995 J. Appl. Phys. 78 5633
[3] Barker R J and Schamiloglu E 2001 High-Power Microwave Sources and Technologies (New York: IEEE)
[4] Jordan N M, Lau Y Y, French D M, Gilgenbach R M and Pengvanich P 2007 J. Appl. Phys. 102 033301
[5] Rosenman G, Shur D, Krasik Y E and Dunaevsky A 2000 J. Appl. Phys. 88 6109
[6] Watson A 1967 J. Appl. Phys. 38 2019
[7] Latham R V 1982 Vacuum 32 137
[8] Anderson R A and Brainard J P 1980 J. Appl. Phys. 51 1414
[9] Cuneo M E 1999 Dielectrics Electr. Insulation IEEE Trans. 6 469
[10] Hachenberg O and Brauer W 1959 Adv. Elect. Elect. Phys. 11 413
[11] Luginsland J W, Lau Y Y, Umstattd R J and Watrous J J 2002 Phys. Plasmas. 9 2371
[12] Geis M W, Efremow N N, Jr., Krohn K E, Twichell J C, Lyszczarz T M, Kalish R, Greer J A and Tabat M D 1997 Lincoln Lab. J. 10 3
[13] Schachter L 1998 Appl. Phys. Lett. 72 421
[14] Chung M S, Choi T S and Yoon B G 2005 Appl. Surf. Sci. 251 177
[15] Lewis T J 1955 J. Appl. Phys. 26 1405
[16] Ansys Corporation, http://www.ansys.com
[17] Shur D and Rosenman G 1999 J. Phys. D 32 L29
[18] Shur D, Rosenman G, Krasik Y E and Kugel V D 1996 J. Appl. Phys. 79 3669
[19] De Tourreil C H and Srivastava K D 1973 IEEE Trans. Electron. Insulation 1 17 |
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