| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region |
| ZHOU Yi, CHEN Jian-Xin**, XU Zhi-Cheng, WANG Fang-Fang, XU Qing-Qing, XU Jia-Jia, BAI Zhi-Zhong, JIN Chuan, HE Li |
Key Laboratory of Infrared Imaging Material and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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| Cite this article: |
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ZHOU Yi, CHEN Jian-Xin, XU Zhi-Cheng et al 2014 Chin. Phys. Lett. 31 108503 |
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Abstract The effect of Be doping on the quantum efficiency and the dark current of InAs/GaSb long-wavelength infrared superlattice photodetectors grown by molecular-beam epitaxy on GaSb substrates are reported. A significant improvement of quantum efficiency (QE) with p-type doping is demonstrated. Our results show that Be doping level at 2.5×1015 cm3 gives the highest quantum efficiency of product 28%. We also demonstrate that the increased QE is not only resulted from the longer minority carrier diffusion length, but also the p-n junction location change. Finally, the result also shows that the sample with a doping density of 2.5×1015 cm3 has the largest D* as 8.68×1010 cm?Hz1/2?W?1, which is almost five times D* of the non-intentionally doped one.
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Published: 31 October 2014
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.61.Ey
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(III-V semiconductors)
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61.72.uj
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(III-V and II-VI semiconductors)
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