| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO3 Gate Dielectric |
| YU Wen-Jie1**, ZHANG Bo1, LIU Chang1, XUE Zhong-Ying1, CHEN Ming1, ZHAO Qing-Tai2 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Peter Grünberg Institute 9 (PGI 9), Forschungszentrum Jülich and JARA Fundamentals of Future Intormation Technology, 52425 Jülich, Germany
|
|
| Cite this article: |
|
YU Wen-Jie, ZHANG Bo, LIU Chang et al 2014 Chin. Phys. Lett. 31 016101 |
|
|
|
|
Abstract A strained-SiGe p-channel metal-oxide-semiconductor-field-effect transistors (p-MOSFETS) with higher-κ LaLuO3 gate dielectric was fabricated and electrically characterized. The novel higher-κ (κ～30) gate dielectric, LaLuO3, was deposited by molecular-beam deposition and shows good quality for integration into the transistor. The transistor features good output and transfer characteristics. The hole mobility was extracted by the splitting C–V method and a value of 200 cm2/V?s was obtained for strong inversion conditions, which indicates that the hole mobility is well enhanced by SiGe channel and that the LaLuO3 layer does not induce additional significant carrier scattering. Gate induced drain leakage is measured and analyzed by using an analytical model. Band-to-band tunneling efficiencies under high and low fields are found to be different, and the tunneling mechanism is discussed.
|
|
|
Received: 02 September 2013
Published: 28 January 2014
|
|
| PACS: |
61.72.uf
|
(Ge and Si)
|
| |
77.84.-s
|
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
|
| |
72.20.Ee
|
(Mobility edges; hopping transport)
|
|
|
|
|
|
[1] von Haartman M, Malm B G and Ostling M 2006 IEEE Trans. Electron Devices 53 836
[2] Oh J, Ok I, Kang C Y, Jamil M, Lee S H, Loh W Y, Huang J, Sassman B, Smith L, Parthasarathy S, Coss B E, Choi W H, Lee H D, Cho M, Banerjee S K, Majhi P, Kirsch P D, Tseng H H and Jammy R 2009 Symp. VLSI Tech. Dig. 238
[3] Gomez L, Hashemi P and Hoyt J L 2009 IEEE Trans. Electron Devices 56 2644
[4] Nayak D K, Woo J C S, Park J S, Wang K L and MacWilliams K P 1993 Appl. Phys. Lett. 62 2853
[5] Fischetti M V and Laux S E 1996 J. Appl. Phys. 80 2234
[6] Lopes J M L, Roeckerath M, Heeg T, Rije E, Schubert J, Mantl S, Afanas'ev V V, Shamuilia S, Stesmans A, Jia Y and Schlom D G 2006 Appl. Phys. Lett. 89 222902
[7] Loo R, Sorada H, Inoue A, Lee B C, Hyun S, Jakschik S, Lujan G, Hoffmann T Y and Caymax M 2007 Semicond. Sci. Technol. 22 S110
[8] Romanjek K, Andrieu F, Ernst T and Ghibaudo G 2005 Solid-State Electron. 49 721
[9] Adrieu F, Ernst T, Faynot O, Bogumilowicz Y, Hartmann J M, Eymery J, Lafond D, Levaillant Y M, Dupre C, Powers R, Fournel F, Fenouillet-Beranger C, Vandooren A, Ghyselen B, Mazure C, Kernevez N, Ghibaudo G and Deleonibus S 2005 IEEE Int. SOI Conf. Proc. p 223
[10] Chen J, Chan T Y, Chen I C, Ko P K and Hu C 1987 IEEE Electron Device Lett. 8 515
[11] Chen J H, Wong S C and Wang Y H 2001 IEEE Trans. Electron Devices 48 1400 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
