| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Temperature Dependence of the AlN E1(To) Phonon Decay, Thermal Expansion and Strain Effect in AlN/Sapphire by Infrared Reflection |
| ZHOU Shu-Tong, YU Chen-Hui, ZHANG Bo** |
National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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| Cite this article: |
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ZHOU Shu-Tong, YU Chen-Hui, ZHANG Bo 2013 Chin. Phys. Lett. 30 097701 |
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Abstract Infrared reflectivity measurement is carried out for AlN films on sapphire substrates. The frequencies of the symmetry optical phonon E1(TO) in the temperature range from 77 K to 500 K are reported by fitting the experimental reflectivity with the classical multi-oscillators model. Taking the lattice thermal expansion and Klemens process of the phonon decay into account, along with the strain effect introduced by thermal mismatch between the film and the substrate, the temperature effect on the frequency of the optical phonon E1(TO) is revealed. It is shown that the shift of frequency is mainly attributed to the decay process while the strain effect induced by thermal mismatch plays a non-negligible role in the outcomes of the strength and damping parameters.
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Received: 07 January 2013
Published: 21 November 2013
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| PACS: |
77.55.hd
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(AlN)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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63.20.K-
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(Phonon interactions)
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77.80.bn
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(Strain and interface effects)
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