| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing |
| LIU Yan, WANG Hong-Juan, YAN Jing, HAN Gen-Quan** |
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044
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| Cite this article: |
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LIU Yan, WANG Hong-Juan, YAN Jing et al 2013 Chin. Phys. Lett. 30 088502 |
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Abstract We report the demonstration of an n-channel lateral Si tunnel field-effect transistor (TFET) with a single crystalline Ge source fabricated using the gate-last process. The p Ge source was in situ doped and grown at 320°C. An abrupt interface between Ge source and Si channel with type-II band alignment and a steep source doping profile (～1.5 nm/decade) formed the tunneling junction. This allows the realization of a TFET with a steep subthreshold swing of 49 mV/decade at room temperature and an ION/IOFF ratio of 107.
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Received: 07 June 2013
Published: 21 November 2013
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| PACS: |
85.30.Tv
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(Field effect devices)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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61.72.U-
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(Doping and impurity implantation)
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[1] Hu C, Patel P, Bowonder A, Jeon K, Kim S H, Loh W Y, Kang C Y, Oh J, Majhi P, Javey A, King Liu T J and Jammy R 2010 IEDM Tech. Dig. p 387
[2] Huang Q Q, Huang R, Zhan Z, Qiu Y, Jiang W, Wu C and Wang Y 2012 IEDM Tech. Dig. p 187
[3] Huang Q Q, Zhan Z, Huang R, Mao X, Zhang L, Qiu Y and Wang Y 2011 IEDM Tech. Dig. p 82
[4] Ionescu A M and Riel H 2011 Nature 479 329
[5] Han G, Guo P, Yang Y, Zhan C, Zhou Q and Yeo Y C 2011 Appl. Phys. Lett. 98 153502
[6] Yang Y, Su S, Guo P, Wang W, Gong X, Wang L, Low K L, Zhang G, Xue C, Cheng B, Han G and Yeo Y C 2012 IEDM Tech. Dig. p 379
[7] Han G, Guo P, Yang Y, Fan L, Yee Y S, Zhan C and Yeo Y C 2011 Jpn. J. Appl. Phys. 50 04DJ07
[8] Kotlyar R, Avci U E, Rios R, Linton T D, Kuhn K J and Young I A 2013 Appl. Phys. Lett. 102 113106
[9] Dewey G, Chu-Kung B, Boardman J, Fastenau J M, Kavalieros J, Kotlyar R, Liu W K, Lubyshev D, Metz M, Mukherjee N, Oakey P, Pillarisetty R, Radosavljevic M, Then H W and Chau R 2011 IEDM Tech. Dig. p 785
[10] Ford A C, Yeung C W, Chuang S, Kim H S, Plis E, Krishna S, Hu C and Javey A 2011 Appl. Phys. Lett. 98 113105
[11] Nayfeh O M, Chleirigh C N, Hennessy J, Gomez L, Hoyt L and Antoniadis D A 2008 IEEE Electron Device Lett. 29 1074
[12] Knock J and Appenzeller J 2010 IEEE Electron Device Lett. 31 305
[13] Jeon K, Loh W Y, Patel P, Kang C Y, Oh J, Bowonder A, Park C, Park C S, Smith C, Majhi P, Tseng H H, Jammy R, King Liu T J and Hu C 2010 VLSI Symp. Tech. Dig. p 121
[14] Yang Y, Guo P, Han G, Low K L, Zhan C and Yeo Y C 2012 J. Appl. Phys. 111 114514 |
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