| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Differential Structure and Characteristics of a New-Type Silicon Magnetic Sensitivity Transistor |
| ZHAO Xiao-Feng, WEN Dian-Zhong**, PAN Dong-Yang, GUAN Han-Yu, LV Mei-Wei, LI Lei |
Key Laboratory of Electronics Engineering, Heilongjiang University, Harbin 150080
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| Cite this article: |
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ZHAO Xiao-Feng, WEN Dian-Zhong, PAN Dong-Yang et al 2013 Chin. Phys. Lett. 30 088501 |
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Abstract A differential structure magnetic sensor is proposed. It is comprised of two new-type silicon magnetic sensitivity transistors (SMSTs) with similar characteristics and has a common emitter, two bases and two collectors. The sensor is fabricated by micro electromechanical system technology on a ?100? high resistivity silicon wafer. At room temperature, when supply voltage VDD=10.0 V, all the base currents Ib1 of SMST1 and Ib2 of SMST2 equal 6.0 mA, the absolute magnetic sensitivity for the two SMSTs are 46.8 mV/kG and 56.1 mV/kG, respectively, and the absolute magnetic sensitivity for the sensor is 102.9 mV/kG. Meanwhile, the temperature coefficient αV of the collector output voltage of the sensor is 0.044%/°C. The experimental results show that the magnetic sensitivity and the temperature characteristics of the sensor can be improved and ameliorated compared with a single SMST.
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Received: 26 April 2013
Published: 21 November 2013
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| PACS: |
85.70.Ay
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(Magnetic device characterization, design, and modeling)
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85.80.Jm
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(Magnetoelectric devices)
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85.85.+j
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(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)
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