| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method |
| ZHANG Shi-Zhu, YE Xiao-Ling**, XU Bo, LIU Shu-Man, ZHOU Wen-Fei, WANG Zhan-Guo |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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ZHANG Shi-Zhu, YE Xiao-Ling, XU Bo et al 2013 Chin. Phys. Lett. 30 087804 |
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Abstract Low-density (～109cm?2), long-wavelength (more than 1300 nm at room temperature) InAs/GaAs quantum dots (QDs) with only 1.75-mono-layer (ML) InAs deposition were achieved by using a formation-dissolution-regrowth method. Firstly, small high-density InAs QDs were formed at 490°C, then the substrate temperature was ramped up to 530°C, and another 0.2 ML InAs was added. After this process, the density of the InAs QDs became much lower, and their size became much larger. The full width at half maximum of the photoluminescence peak of the low density, long-wavelength InAs QDs was as small as 27.5 meV.
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Received: 09 April 2013
Published: 21 November 2013
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[1] Bennett P A, Copel M, Cahill D, Falta J and Tromp R M 1992 Phys. Rev. Lett. 69 1224
[2] Knill E, Laflamme R and Milburn G J 2001 Nature 409 46
[3] Santori C, Pelton M, Solomon G, Dale Y and Yamamoto E 2001 Phys. Rev. Lett. 86 1502
[4] Yuan Z L, Kardynal B E, Stevenson R M, Shields A J, Lobo C J, Cooper K, Beattie N S, Ritchie D A and Pepper M 2002 Science 295 102
[5] Kamiya I, Tanaka I, Ohtsuki O and Sakaki H 2002 Physica E 13 1172
[6] Ohmori M, Kawazu T, Torii K, Takahashi T and Sakaki H 2008 Appl. Phys. Express 1 061202
[7] Sun J, Jin P and Wang Z G 2004 Nanotechnology 15 1763
[8] Chia C, Chua S J, Miao Z L and Chye Y H 2004 Appl. Phys. Lett. 85 567
[9] Mukhametzhanov I, Wei Z, Heitz R and Madhukar A 1999 Appl. Phys. Lett. 75 85
[10] Saravanan S and Shimizu H 2006 J. Cryst. Growth 289 14
[11] Seravalli L, Trevisi G and Frigeri P 2012 CrystEngComm 14 6833
[12] Seravalli L, Trevisi G, Frigeri P, Rivas D, Munoz-Matutano G, Suarez I, Alen B, Canet-Ferrer J and Martinez-Pastor J P 2011 Appl. Phys. Lett. 98 173112
[13] Huang S S, Niu Z C, Ni H Q, Zhan F, Zhao H, Sun Z and Xia J B 2007 Chin. Phys. Lett. 24 1025
[14] Nakata Y, Mukai K, Sugawara M, Ohtsubo K, Ishikawa H and Yokoyama N 2000 J. Cryst. Growth 208 93
[15] Heyn C, Endler D, Zhang K and Hansen W 2000 J. Cryst. Growth 210 421
[16] Heyn C 2002 Phys. Rev. B 66 075307
[17] Hu D Z, Trampert A and Schaadt D M 2010 J. Cryst. Growth 312 447
[18] Pohl U W, Potschke K, Schliwa A, Guffarth F, Bimberg D, Zakharov N D, Werner P, Lifshits M B, Shchukin V A and Jesson D E 2005 Phys. Rev. B 72 245332 |
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