Effects of the Bridging Bond on Electronic Transport in a D-B-A Device

doi:10.1088/0256-307X/30/8/087201

Chin. Phys. Lett.

2013, Vol. 30

Issue (8): 087201 DOI: 10.1088/0256-307X/30/8/087201

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Effects of the Bridging Bond on Electronic Transport in a D-B-A Device

LI Ming-Jun¹, LONG Meng-Qiu^1,2**, XU Hui^1**

¹School of Physics and Electronics, Central South University, Changsha 410083
²Institute of Super Microstructure and Ultrafast Process, Central South University, Changsha 410083

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LI Ming-Jun, LONG Meng-Qiu, XU Hui 2013 Chin. Phys. Lett. 30 087201

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Abstract By using density functional theory combined with a nonequilibrium Green's functions approach, the electronic transport properties of different bridges connecting benzene-based heterojunction molecular devices are investigated. We focus on the effects of the bridging bond polarity and its bond length. Our results show that the polar bond plays a significant role in determining the overall conductance of the molecular devices. The effects of a current plateau and the negative differential resistance can be observed. These simulation results suggest that the proposed models may be helpful for designing practical molecular devices.

Received: 04 March 2013 Published: 21 November 2013

PACS:	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	73.63.-b	(Electronic transport in nanoscale materials and structures)
	85.35.-p	(Nanoelectronic devices)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/30/8/087201 OR https://cpl.iphy.ac.cn/Y2013/V30/I8/087201

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	LI Ming-Jun
	LONG Meng-Qiu
	XU Hui

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