| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Ferroelectricity in Pulsed Laser Deposited Ba(Fe1/2Nb1/2)O3 Thin Films |
| ZHANG Wei, WU Shu-Ya**, LI Lei, CHEN Xiang-Ming |
Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027
|
|
| Cite this article: |
|
ZHANG Wei, WU Shu-Ya, LI Lei et al 2013 Chin. Phys. Lett. 30 057701 |
|
|
|
|
Abstract Complex perovskite Ba(Fe1/2Nb1/2)O3 thin films are grown on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Non-linear polarization–electric-field (P–E) loops are observed at low temperatures under different electric fields and frequencies. The broad peak in the corresponding current density–electric field (J–E) loop confirms the existence of domain switching. The remnant polarization decreases slightly when the temperature decreases from 153 to 123 K, which differentiates Ba(Fe1/2Nb1/2)O3 from normal ferroelectrics. The Raman spectra of Ba(Fe1/2Nb1/2)O3 thin films show two-mode-like behavior in the high-wavenumber region, which can be caused by the local chemically heterogeneous zones of NbO6 and FeO6. The weak ferroelectricity observed in the Ba(Fe1/2Nb1/2)O3 thin films might originate from the composition fluctuation and subsequent symmetry breaking in the material. The present results might provide a new aspect to the understanding of the intrinsic dielectric nature in Ba(Fe1/2Nb1/2)O3.
|
|
|
Received: 24 January 2013
Published: 31 May 2013
|
|
| PACS: |
77.80.-e
|
(Ferroelectricity and antiferroelectricity)
|
|
|
|
|
|
[1] Bhalla A S et al 2000 Mater. Res. Innovat. 4 3
[2] King G and Woodward P M 2010 J. Mater. Chem. 20 5785
[3] Zhou S Q and Ding B F 2011 Chin. Phys. B 20 127701
[4] Fang J H et al 2009 Acta Phys. Sin. 58 3491 (in Chinese)
[5] Wang Z et al 2007 Appl. Phys. Lett. 90 022904
[6] Raevski I P et al 2003 Integr. Ferroelectr. 55 757
[7] Saha S and Sinha T P 2006 J. Appl. Phys. 99 014109
[8] Liu Y Y et al 2007 Appl. Phys. Lett. 90 262904
[9] Ramirez A P et al 2000 Solid State Commun. 115 217
[10] Homes C C et al 2001 Science 293 673
[11] Wu J B et al 2002 Phys. Rev. Lett. 89 217601
[12] Lunkenheimer P et al 2009 Eur. Phys. J.: Spec. Top. 180 61
[13] Saha S and Sinha T P 2002 Phys. Rev. B 65 134103
[14] Saha S and Sinha T P 2002 J. Phys.: Condens. Matter 14 249
[15] Raevski I P et al 2003 J. Appl. Phys. 93 4130
[16] Raevski I P et al 2009 Ferroelectrics 379 48
[17] Chung C Y et al 2004 J. Appl. Phys. 96 6624
[18] Abdelkafi Z et al 2006 J. Appl. Phys. 100 114111
[19] Rivera I et al 2009 Solid State Commun. 149 172
[20] Wang Z et al 2007 Appl. Phys. Lett. 90 102905
[21] Zhang W et al 2009 J. Appl. Phys. 106 104108
[22] Zhang W et al 2010 J. Appl. Phys. 108 044104
[23] Pintillie L and Alexe M 2005 Appl. Phys. Lett. 87 112903
[24] Tezuka K et al 2000 J. Solid State Chem. 154 591
[25] Levin I, Cockayne E, Lufaso M W, Woicik J C and Maslar J E 2006 Chem. Mater. 18 854
[26] Fu M S, Liu X Q and Chen X M 2008 J. Appl. Phys. 104 104108
[27] Martinez R, Palai R, Huhtinen H, Liu J, Scott J F and Katiyar R S 2010 Phys. Rev. B 82 134104
[28] Chaabane B, Kreisel J, Bouvier P, Lucazeau G and Dkhil B 2004 Phys. Rev. B 70 134114
[29] Correa M, Kumar A, Priya S, Katiyar R S and Scott J F 2011 Phys. Rev. B 83 014302
[30] Zhang W, Li L and Chen X M 2011 J. Appl. Phys. 110 064113
[31] Laguta V V, Rosa J, Jastrabik L, Blinc R, Cevc P, Zalar B, Remskar M, Raevskaya S I and Raevski I P 2010 Mater. Res. Bull. 45 1720
[32] Lufaso M W, Barnes P W and Woodward P M 2006 Acta Crystallogr. Sect. B: Struct. Crystallogr. Cryst. Chem. 62 397
[33] Yan H X, Inam F, Viola G, Ning H P, Zhang H T, Jiang Q H, Zeng T, Gao Z P and Reece M J 2011 J. Adv. Dielectr. 1 107 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
