| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation |
| XU Wei-Zong, FU Li-Hua, LU Hai**, REN Fang-Fang, CHEN Dun-Jun, ZHANG Rong, ZHENG You-Dou |
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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XU Wei-Zong, FU Li-Hua, LU Hai et al 2013 Chin. Phys. Lett. 30 057303 |
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Abstract Edge termination is one of the key technologies for fabricating high voltage Schottky barrier diodes (SBDs), which could effectively reduce the peak electric field along the Schottky contact edge and enhance the breakdown voltage. We adopt a high-resistivity ring structure as the edge termination for planar GaN SBDs. The edge termination is formed by self-aligned boron implantation on the edge of devices to form a highly damaged layer. In the implant dose and energy ranges studied experimentally, the GaN SBDs show improved blocking characteristics in terms of reverse leakage current and breakdown voltage at higher implant dose or implant energy. Meanwhile, the forward turn-on characteristics of the GaN SBDs exhibit no apparent change.
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Received: 31 January 2013
Published: 31 May 2013
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| PACS: |
73.40.Cg
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(Contact resistance, contact potential)
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73.61.Ey
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(III-V semiconductors)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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73.25.+i
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(Surface conductivity and carrier phenomena)
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