CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells |
LI Liang1, ZHAO De-Gang1**, JIANG De-Sheng1, LIU Zong-Shun1, CHEN Ping1, WU Liang-Liang1, LE Ling-Cong1, WANG Hui2, YANG Hui1,2 |
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
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Cite this article: |
LI Liang, ZHAO De-Gang, JIANG De-Sheng et al 2013 Chin. Phys. Lett. 30 028801 |
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Abstract An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature (LT) GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition. The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated. It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer, ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.
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Received: 15 November 2012
Published: 02 March 2013
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