| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells |
| LI Liang1, ZHAO De-Gang1**, JIANG De-Sheng1, LIU Zong-Shun1, CHEN Ping1, WU Liang-Liang1, LE Ling-Cong1, WANG Hui2, YANG Hui1,2 |
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083
2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
|
|
| Cite this article: |
|
LI Liang, ZHAO De-Gang, JIANG De-Sheng et al 2013 Chin. Phys. Lett. 30 028801 |
|
|
|
|
Abstract An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature (LT) GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition. The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated. It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer, ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.
|
|
|
Received: 15 November 2012
Published: 02 March 2013
|
|
|
|
|
|
|
|
[1] Matioli E, Neufeld C, Iza M, Cruz S C, Al-heji A A, Chen X, Farrell R M, Keller S, Denbaars S, Mishra U, Nakamura S, Speck J and Weisbuch C 2011 Appl. Phys. Lett. 98 021102
[2] Dahal R, Pantha B, J Li, Lin J Y and Jiang H X 2009 Appl. Phys. Lett. 94 063505
[3] Jani O, Ferguson I, Honsberg C and Kurtz S 2007 Appl. Phys. Lett. 91 132117
[4] Xue J, Chen D, Liu B and Xie Z 2009 Chin. Phys. Lett. 26 098102
[5] Wu J, Walukiewicz W, Yu K M, Shan W and Ager J W 2003 J. Appl. Phys. 94 6477
[6] Neufeld C J, Toledo N G, Cruz S C, Iza M, Denbaars S P and Mishra U K 2008 Appl. Phys. Lett. 93 143502
[7] Dahal R, J Li, K Aryal, Lin J Y and Jiang H X 2010 Appl. Phys. Lett. 97 073115
[8] Kuwahara Y, Fujii T, Fujiyama Y, SugiyamaT, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I and Amano H 2010 Appl. Phys. Express 3 111001
[9] Sang L, Liao M, Ikeda N, Koide Y and Sumiya M 2011 Appl. Phys. Lett. 99 161109
[10] Hu Y L, Farrell R M, Neufeld C J, Iza M and Cruz S C 2012 Appl. Phys. Lett. 100 161101
[11] Wuu D, Wu H, Chen S, Tsai T, Zheng X and Horng R 2009 J. Cryst. Growth 311 3063 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
