| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Phase Evolution of Cubic ZnS Annealed in Mild Oxidizing Atmosphere |
| XUE Shu-Wen**, ZHANG Jun, SHAO Le-Xi |
Department of Physics, Zhanjiang Normal College, Zhanjiang 524048
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| Cite this article: |
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ZHANG Jun, XUE Shu-Wen, SHAO Le-Xi 2012 Chin. Phys. Lett. 29 038102 |
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Abstract ZnS thin films are prepared by thermal evaporation of high-purity ZnS powder on quartz glass substrates. The samples were annealed in floating argon at temperatures from 300°C to 900°C. The effects of annealing temperature on the structural and optical properties were investigated by x-ray diffraction (XRD), scanning electron microscope (SEM) and optical absorption. The results show that annealing below 500°C is beneficial to improve the quality of ZnS films. When the annealing temperature exceeds 500°C, ZnS is gradually oxidized into ZnSO4, which has evident influences on the structural and optical properties of ZnS films.
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| Keywords:
81.05.Cy
61.72.Cc
78.70.Dm
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Received: 07 December 2011
Published: 11 March 2012
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| PACS: |
81.05.Cy
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(Elemental semiconductors)
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61.72.Cc
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(Kinetics of defect formation and annealing)
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78.70.Dm
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(X-ray absorption spectra)
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