| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Actively Q−Switched Laser Performance of Holmium-Doped Lu2SiO5 Crystal |
| YAO Bao-Quan**, DUAN Xiao-Ming, YU Zheng-Ping, WANG Yue-Zhu |
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
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YU Zheng-Ping, YAO Bao-Quan, WANG Yue-Zhu et al 2012 Chin. Phys. Lett. 29 034208 |
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Abstract We present the actively Q−switched performance of Ho3+ in LSO crystal for operation at cryogenic and room temperature. For a cryogenic−temperature Q−switched Tm,Ho:LSO laser, a total incident diode power of 12.1 W is used to generate a maximum pulse energy of 1.15 mJ at a pulse repetition frequency (PRF) of 2 kHz (15.8 kW peak power). For a room-temperature Q−switched Ho:LSO laser pumped directly by a 1.91-µm Tm:YLF laser, the maximum average output power of 1.75 W and the shortest pulse width of 39 ns are achieved at a PRF of 5 kHz when the absorbed pump power is 12.2 W.
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| Keywords:
42.55.Xi
42.60.Pk
42.72.Ai
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Received: 24 October 2011
Published: 11 March 2012
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