| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes |
| LI Ya-Ming, HU Wei-Xuan, CHENG Bu-Wen**, LIU Zhi, WANG Qi-Ming |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083.
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| Cite this article: |
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WANG Qi-Ming, LIU Zhi, LI Ya-Ming et al 2012 Chin. Phys. Lett. 29 034205 |
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Abstract Ge-on-Si p-i-n diodes are fabricated by using two-step Ge film epitaxial technology on Si substrates. A remarkable Franz–Keldysh effect is observed in the wavelength range of 1620–1640 nm with a largest Δα/α of 2.8 at 1640 nm by optical responsivity measurement. The remarkable change of absorption coefficient in the considerable large wavelength range makes Ge−on-silicon a promising candidate for Si-based electro-absorption modulators. The initial design predicts a modulator of bandwidth ∼50 GHz, and the extinction ratio >7 dB by the measured parameter.
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| Keywords:
42.79.Hp
78.66.-w
42.82.-m
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Received: 07 December 2011
Published: 11 March 2012
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| PACS: |
42.79.Hp
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(Optical processors, correlators, and modulators)
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78.66.-w
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(Optical properties of specific thin films)
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42.82.-m
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(Integrated optics)
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