| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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A Raman Study of the Origin of Oxygen Defects in Hexagonal Manganite Thin Films |
| CHEN Xiang-Bai1**, HIEN Nguyen Thi Minh2, YANG In-Sang2**, LEE Daesu3, NOH Tae-Won3 |
1Department of Nano Science & Mechanical Engineering and Nanotechnology Research Center,Konkuk University, Chungju 380-701, Korea
2Department of Physics and Division of Nano-Sciences, Ewha Womans University, Seoul 120-750, Korea
3ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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| Cite this article: |
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CHEN Xiang-Bai, HIEN Nguyen Thi Minh, YANG In-Sang et al 2012 Chin. Phys. Lett. 29 126103 |
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Abstract Oxygen defects are usually unavoidable when synthesizing oxide thin films. We study the origin of the oxygen defects in hexagonal manganite HoMnO3 epitaxial thin films through Raman scattering spectroscopy. Our results show that the oxygen defects in hexagonal HoMnO3 thin films have distinct effects on different phonon modes and on magnon scattering. Our analyses indicate that the oxygen defects in hexagonal HoMnO3 thin films mainly originate from the basal O3 and/or O4 oxygen vacancies. Furthermore, our analyses of oxygen defects predict that the Mn 3d orbitals would be more strongly hybridized with the apical O1 and/or O2 2p orbitals than the basal O3 and/or O4 2p orbitals. This prediction is consistent with our resonant Raman scattering study and earlier first-principle calculations of the electronic structures of hexagonal manganites.
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Received: 26 July 2012
Published: 04 March 2013
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| PACS: |
61.72.-y
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(Defects and impurities in crystals; microstructure)
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61.72.Dd
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(Experimental determination of defects by diffraction and scattering)
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78.30.-j
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(Infrared and Raman spectra)
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