| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition |
| DING Yu1, LIU Bin1**, TAO Tao1, LI Yi1, ZHANG Zhao1, ZHANG Rong1**, XIE Zi-Li1, ZHAO Hong1, GU Shu-Lin1, LV Peng2, ZHU Shi-Ning2, ZHENG You-Dou1 |
1Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2School of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
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| Cite this article: |
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DING Yu, LIU Bin, TAO Tao et al 2012 Chin. Phys. Lett. 29 107801 |
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Abstract The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence (PL), optical transmission and Raman scattering measurements. Through polarised PL and transmission spectra, the in-plane optical anisotropic properties of a-plane GaN film are found, which are attributed to the topmost valance band (at Γ point) split into three sub-bands under anisotropic strain. The PL spectra also exhibit that the light hole band moves up more rapidly than the spin-orbit crystal-field spilt-off hole band with the increasing in-plane anisotropic compressive strain. Raman scattering spectra under different configurations further indicate the in-plane anisotropy and the hexagonal crystalline structure of these a-plane GaN films.
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Received: 12 April 2012
Published: 01 October 2012
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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71.20.Nr
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(Semiconductor compounds)
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81.05.Ea
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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