| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Sb Rich Ge2Sb5Te5 Alloy for High-Speed Phase Change Random Access Memory Applications |
| ZHANG Qi1, SONG San-Nian2**, XU Feng1 |
1Key Laboratory of MEMS of Ministry of Education, School of Electronic Science & Engineering, Southeast University, Nanjing 210096
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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ZHANG Qi, SONG San-Nian, XU Feng 2012 Chin. Phys. Lett. 29 107802 |
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Abstract Sb rich Ge2Sb5Te5 materials are investigated for use as the storage medium for high-speed phase change memory (PCM). Compared with conventional Ge2Sb2Te5, Ge2Sb5Te5 films have a higher crystallisation temperature (～200°C), larger crystallisation activation energy (3.13 eV), and a better data retention ability (100.2°C for ten years). A reversible switching between set and reset states can be realised by an electric pulse as short as 5 ns for Ge2Sb5Te5-based PCM cells, over 10 times faster than the Ge2Sb2Te5-based one. In addition, Ge2Sb2Te5 shows a good endurance up to 3×106 cycles with a resistance ratio of about three orders of magnitude. This work clearly reveals the highly promising potential of Ge2Sb5Te5 films for applications in high-speed PCM.
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Received: 23 May 2012
Published: 01 October 2012
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| PACS: |
78.30.Er
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(Solid metals and alloys ?)
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74.62.-c
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(Transition temperature variations, phase diagrams)
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74.62.Dh
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(Effects of crystal defects, doping and substitution)
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81.15.Cd
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(Deposition by sputtering)
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