| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage |
| WANG Zhi-Gang**, CHEN Wan-Jun, ZHANG Bo, LI Zhao-Ji |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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| Cite this article: |
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WANG Zhi-Gang, CHEN Wan-Jun, ZHANG Bo et al 2012 Chin. Phys. Lett. 29 107202 |
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Abstract A novel controllable hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage (LOV) is proposed. Its mechanism can be explained by the field-controlled energy band model. This model reveals that the electric field in the AlGaN layer alters the energy band to result in a variation of the two-dimensional electron gas (2DEG) at AlGaN/GaN interface; the field can be changed by the thickness d of the AlGaN layer and the applied bias. As the d reduces below the critical thickness, the 2DEG vanishes and then the channel is pinched off. Therefore, the threshold voltage of HA-FER can be designed as low as 0 V leading to LOV (<1 V). The analytical characteristic of the HA-FER is calculated and validated by the simulated results. These results also demonstrate that the forward properties of HA-FER are superior to the conventional SBD due to the high Schottky barrier.
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Received: 30 May 2012
Published: 01 October 2012
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