| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors |
| LI Shao-Juan1,3, HE Xin1, HAN De-Dong1, SUN Lei1, WANG Yi1, HAN Ru-Qi1 , CHAN Man-Sun2, ZHANG Sheng-Dong1,3** |
1Institute of Microelectronics, Peking University, Beijing 100871
2Hong Kong University of Science and Technology, Hong Kong
3Shenzhen Graduate School, Peking University, Shenzhen 518055
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| Cite this article: |
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LI Shao-Juan, HE Xin, HAN De-Dong et al 2012 Chin. Phys. Lett. 29 018501 |
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Abstract The structural and electrical properties of ZnO films deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated. While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2) is low, the grain size abruptly decreases to a few nanometers as pO2 increases to a critical value, and then becomes almost unchanged with a further increase in pO2. In addition, the resistivity of the ZnO films shows a non−monotonic dependence on pO2, including an abrupt transition of about seven orders of magnitude at the critical pO2. Thin−film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 107, an off−current in the order of pA, a threshold voltage of about 4.5 V, and a carrier mobility of about 2 cm2/(V⋅s). The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.
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| Keywords:
85.30.Tv
73.61.Ga
81.15.Cd
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Received: 27 September 2011
Published: 07 February 2012
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