A Study of GaN Grown on SiH<sub>4</sub> Pre-Treated 6H-SiC Substrates

doi:10.1088/0256-307X/29/1/018102

Chin. Phys. Lett.

2012, Vol. 29

Issue (1): 018102 DOI: 10.1088/0256-307X/29/1/018102

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

A Study of GaN Grown on SiH₄ Pre-Treated 6H-SiC Substrates

SONG Shi-Wei¹, LIANG Hong-Wei^1**, LIU Yang¹, XIA Xiao-Chuan¹, SHEN Ren-Sheng¹, LUO Ying-Min¹, DU Guo-Tong^1,2

¹School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
²State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012

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SONG Shi-Wei, LIANG Hong-Wei, LIU Yang et al 2012 Chin. Phys. Lett. 29 018102

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Abstract GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH₄ in a metal organic chemical vapor deposition system. The influence of the SiH₄ pre−treatment conditions on the SiC surface is carefully investigated. It is found that SiH₄ could react with the SiC surface oxide, which will change the surface termination. Moreover, our experiments demonstrate that SiH₄ pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.

Keywords: 81.05.Ea 78.55.Cr

Received: 20 September 2011 Published: 07 February 2012

PACS:	81.05.Ea	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/1/018102 OR https://cpl.iphy.ac.cn/Y2012/V29/I1/018102

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	SONG Shi-Wei
	LIANG Hong-Wei
	LIU Yang
	XIA Xiao-Chuan
	SHEN Ren-Sheng
	LUO Ying-Min
	DU Guo-Tong

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