| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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The Growth of Semi-Polar ZnO (10 |
| SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 |
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| Cite this article: |
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SANG Ling, WANG Jun, SHI Kai et al 2012 Chin. Phys. Lett. 29 018101 |
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Abstract Semi-polar ZnO (1011) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500°C. X−ray φ scanning indicates that there are six kinds of in−plane domain growths, with the ZnO [1012] parallel to the Si 〈112〉 direction families. The crystallographic orientation of ZnO is supposed to be caused by surface passivation. The methanol, as a polar molecule, may be adsorbed on the Si (111) surface to form a passivation layer, which inhibits the (0001) ZnO plane deposition on the substrate surface, and as a result the ZnO (1011) plane becomes preferred. The optical properties, examined by a room−temperature photoluminescence spectrum, exhibit a strong near-band-edge emission peak at 379 nm, indicating that the (1011) ZnO film has good crystal quality. These results are significant for research into and for the applications of semi-polar ZnO films.
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| Keywords:
81.15.Gh
71.55.Gs
61.05.cp
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Received: 02 August 2011
Published: 07 February 2012
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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71.55.Gs
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(II-VI semiconductors)
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61.05.cp
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(X-ray diffraction)
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