| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN |
| ZENG Chang1,2, ZHANG Shu-Ming2**, WANG Hui2, LIU Jian-Ping2, WANG Huai-Bing2, LI Zeng-Cheng1,2, FENG Mei-Xin1,2, ZHAO De-Gang1, LIU Zong-Shun1, JIANG De-Sheng1, YANG Hui2 |
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
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| Cite this article: |
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ZENG Chang, ZHANG Shu-Ming, WANG Hui et al 2012 Chin. Phys. Lett. 29 017301 |
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Abstract We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm) metal scheme, where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN surface. It is shown that unlike the conventional Ti/Al/Ti/Au contacts, the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10−4 Ω⋅cm2 even after annealing at 350 °C. X-ray diffraction (XRD) measurements by synchrotron radiation and Auger electron spectroscopy (AES) examination are performed to understand the effects of heat treatment.
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| Keywords:
73.40.Cg
73.40.Ns
85.60.Jb
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Received: 14 July 2011
Published: 07 February 2012
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| PACS: |
73.40.Cg
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(Contact resistance, contact potential)
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73.40.Ns
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(Metal-nonmetal contacts)
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85.60.Jb
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(Light-emitting devices)
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