Chin. Phys. Lett.  2012, Vol. 29 Issue (1): 017301    DOI: 10.1088/0256-307X/29/1/017301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN
ZENG Chang1,2, ZHANG Shu-Ming2**, WANG Hui2, LIU Jian-Ping2, WANG Huai-Bing2, LI Zeng-Cheng1,2, FENG Mei-Xin1,2, ZHAO De-Gang1, LIU Zong-Shun1, JIANG De-Sheng1, YANG Hui2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
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ZENG Chang, ZHANG Shu-Ming, WANG Hui et al  2012 Chin. Phys. Lett. 29 017301
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Abstract We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm) metal scheme, where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN surface. It is shown that unlike the conventional Ti/Al/Ti/Au contacts, the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10−4 Ω⋅cm2 even after annealing at 350 °C. X-ray diffraction (XRD) measurements by synchrotron radiation and Auger electron spectroscopy (AES) examination are performed to understand the effects of heat treatment.
Keywords: 73.40.Cg      73.40.Ns      85.60.Jb     
Received: 14 July 2011      Published: 07 February 2012
PACS:  73.40.Cg (Contact resistance, contact potential)  
  73.40.Ns (Metal-nonmetal contacts)  
  85.60.Jb (Light-emitting devices)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/1/017301       OR      https://cpl.iphy.ac.cn/Y2012/V29/I1/017301
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ZENG Chang
ZHANG Shu-Ming
WANG Hui
LIU Jian-Ping
WANG Huai-Bing
LI Zeng-Cheng
FENG Mei-Xin
ZHAO De-Gang
LIU Zong-Shun
JIANG De-Sheng
YANG Hui
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[4] Papanicolaou N A and Zekentes K 2002 Solid-State Electron. 46 1975
[5] Lee M L, Sheu J K and Hu C C 2007 Appl. Phys. Lett. 91 182106
[6] Wang L, Nathan M I, Lim T H and Khan M A and Chen Q 1996 Appl. Phys. Lett. 68 1267
[7] Suzue K, Mohammad S N, Fan Z F, Kim W, Aktas O and Botchkarev A E 1996 J. Appl. Phys. 80 4467
[8] Kokubum Y, Seto T and Nakagomi 2001 Jpn. J. Appl. Phys. 40 663
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