Chin. Phys. Lett.  2011, Vol. 28 Issue (6): 068501    DOI: 10.1088/0256-307X/28/6/068501
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector
CHEN Bin**, YANG Yin-Tang, CHAI Chang-Chun, ZHANG Xian-Jun
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
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CHEN Bin, YANG Yin-Tang, CHAI Chang-Chun et al  2011 Chin. Phys. Lett. 28 068501
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Abstract A model of novel triangular electrode metal-semiconductor-metal (TEMSM) and conventional electrode metal-semiconductor-metal (CEMSM) detectors is established by utilizing the ISE-TCAD simulator. By comparing the simulated results of TEMSM and CEMSM with experimental data, the model validity is verified and the TEMSM detector shows a superiority of a 113% photocurrent increase of 25.4 nA and similar low dark current of 3.16 pA at 30 V bias over the CEMSM device. Furthermore, the electrode angle α, width W and spacing S are optimized to obtain the enhanced device features including high UV−to-visible rejection ratio and large responsivity, etc. Under 30 V bias, the maximum UV-to-visible rejection ratio, comparable responsivity and external quantum efficiency at 310 nm are 13049, 0.1712 A/W and 68.48% for a TEMSM detector with device parameters of α=60°, W=3 μm and S=4 μm, respectively.
Keywords: 85.30.De      85.60.Gz      73.40.Sx     
Received: 13 July 2010      Published: 29 May 2011
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  73.40.Sx (Metal-semiconductor-metal structures)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/6/068501       OR      https://cpl.iphy.ac.cn/Y2011/V28/I6/068501
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CHEN Bin
YANG Yin-Tang
CHAI Chang-Chun
ZHANG Xian-Jun
[1] Nabet B 1997 IEEE Photon. Technol. Lett. 9 223
[2] Chui C O, Okyay A K and Saraswat K C 2003 IEEE Photon. Technol. Lett. 15 1585
[3] Ozelo H F B, De Barros Jr L E M, Nabet B, Neto L G, Romero M A, Ramos A C S and Swart J W 2000 Microwave Opt. Technol. Lett. 26 357
[4] Zhang F, Yang W F, Huang H L, Chen X P, Wu Z Y, Zhu H L, Qi H J, Yao J K, Fan Z X and Shao J D 2008 Appl. Phys. Lett. 92 251102
[5] Behnam A, Johnson J, Choi Y, Noriega L, Günhan Ertosun M, Wu Z C, Rinzler A G, Kapur P, Saraswat K C and Ural A 2008 J. Appl. Phys. 103 114315
[6] Horstmann M, Marso M, Muttersbach J, Schimpf K and Kordos P 1996 Electron. Lett. 32 1613
[7] Lü H M, Chen G D and Yuan J S 2006 Acta Photon. Sin. 35 1052 (in Chinese)
[8] Yang W F, Zhang F, Liu Z G and Wu Z Y 2008 Mater. Sci. Semicond. Process. 11 59
[9] Sridhara S G, Devaty R P and Choyke W J 1998 J. Appl. Phys. 84 2963
[10] Su Y K, Chang S J, Chen C H, Chen J F, Chi G C, Sheu J K, Lai W C and Tsai J M 2002 IEEE Sens. J. 2 366
[11] DESSIS-ISE 2005 2D Semiconductor Device Simulator (Zurich: Integrated Systems Engineering) version 10.0
[12] Chen B, Yang Y T, Li Y J and Liu H X 2010 J. Semicond. 31 064010
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