| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate |
| WU Meng1,2**, ZENG Yi-Ping1,2,3, WANG Jun-Xi3, HU Qiang3
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1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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WU Meng, ZENG Yi-Ping, WANG Jun-Xi et al 2011 Chin. Phys. Lett. 28 068502 |
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Abstract A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal-organic chemical vapor deposition (MOCVD). The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered. Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed. A pattern model is also proposed to analyze the possible mechanisms in atomic scale.
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| Keywords:
85.60.Jb
81.05.Ea
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Received: 17 March 2011
Published: 29 May 2011
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