| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Diode-End-Pumped Tm:Ho:GdVO4 Microchip Laser at Room Temperature |
| YAO Bao-Quan**, CHEN Fang, WANG Qiang, WU Chun-Ting, LI Gang, ZHANG Chao-Hui, WANG Yue-Zhu, JU You-Lun
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National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
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| Cite this article: |
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YAO Bao-Quan, CHEN Fang, WANG Qiang et al 2011 Chin. Phys. Lett. 28 024210 |
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Abstract Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2 μm is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7 mW is obtained by using a 0.25−mm-long crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 5.0%. At the temperature to 283 K, a single-longitudinal-mode laser as much as 8mW at 2048.5 nm is achieved. The M2 factor is measured to be 1.4.
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| Keywords:
42.55.Xi
42.60.Pk
42.72.Ai
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Received: 13 October 2010
Published: 30 January 2011
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