| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Temperature-Dependent Optical Properties of InAs/GaAs Self-Assembled Quantum Dots: Spectroscopic Measurements and an Eight-Band Study |
| ZHOU Xiao-Hao**, CHEN Ping-Ping, CHEN Xiao-Shuang, LU Wei
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National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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ZHOU Xiao-Hao, CHEN Ping-Ping, CHEN Xiao-Shuang et al 2011 Chin. Phys. Lett. 28 117301 |
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Abstract The temperature-dependent optical properties of InAs/GaAs self-assembled quantum dots are studied by spectroscopic measurements along with the corresponding theoretical calculations. We observe the redshift of photoluminescence peak energy with increasing temperature and the thermally activated quenching of each state, which result from the efficient redistribution of carriers in quantum dots. Meanwhile, the electronic structures of the InAs/GaAs quantum dots are investigated by a detailed theoretical study in terms of an eight-band k⋅p model, taking strain effects into account. The calculated transition energies of the excitons are in reasonable agreement with the results of the photoluminescence spectra. According to the spatial distribution of carriers, it is found that the evolution of photogenerated excitons in quantum dots with temperature mainly relies on the electrons rather than the holes.
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| Keywords:
73.21.La
78.55.Cr
78.67.Hc
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Received: 30 June 2011
Published: 30 October 2011
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