| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Composition-Dependent Characterization of Sb2Te3 Thin Films Prepared by Ion Beam Sputtering Deposition |
FAN Ping, ZHENG Zhuang-Hao, LIANG Guang-Xing, CAI Xing-Min, ZHANG Dong-Ping |
| Institute of Thin Film Physics and Application, College of Physics Science and Technology, Shenzhen University, Shenzhen 518060 |
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| Cite this article: |
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FAN Ping, ZHENG Zhuang-Hao, LIANG Guang-Xing et al 2010 Chin. Phys. Lett. 27 087201 |
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Abstract The optimization of ion beam sputtering deposition process for Sb2Te3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb2Te3. Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb2Te3 thin films exhibit the Seebeck coefficient of 190 μVk-1 and the electrical conductivity of 1.1×103 Scm-1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb2Te3 film with a maximum power factor of 2.26×10-3 Wm-1K-2 is achieved when annealed at 400°C. Raman measurement shows that the main peaks are at about 120 cm-1, 252 cm-1and 450 cm-1, in agreement with those of V-VI compound semiconductors.
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| Keywords:
72.20.-i
81.15.Cd
68.55.Ag
73.61.Ey
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Received: 25 March 2010
Published: 28 July 2010
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| PACS: |
72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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81.15.Cd
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(Deposition by sputtering)
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68.55.ag
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(Semiconductors)
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73.61.Ey
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(III-V semiconductors)
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[1] Heremans J P, Jovovic V, Toberer E S, Saramat A, Kurosaki A, Charoenphakdee A, Yamanaka S and Snyder G J 2008 Science 321 554
[2] Bell L E 2008 Science 321 1457
[3] Hicks L D and Dresslhaus M S 1993 Phys. Rev. B 47 16631
[4] Wang C F, Wang Q, Chen L D, Xu X C and Yao Q 2006 Electrochem. Solid-State Lett. 9 C147
[5] Takashiri M, Miyazaki K and Tsukamoto H 2008 Thin Solid Films 516 6336
[6] Noro H, Sato K and Kagechika K 1993 J. Appl. Phys. 73 1252
[7] Tritt T M and Subramanian M A 2006 MRS Bull. 31 188
[8] Yim W M and Amith A 1972 Solid-State Electron. 15 1141
[9] Lim S K, Kim M Y and Oh T S 2009 Thin Solid Flims 517 4199
[10] Giani A, Boulouz A, Pascal-Delannoy F, Foucaran F, Charles E and Boyer A 1999 Mater. Sci. Eng. B 64 19
[11] Boyer A and Cisse E 1992 Mater. Sci. Eng. B 13 103
[12] Pinisetty D and Devireddy R V 2010 Acta Mater. 58 570
[13] Yu J L, Liu B, Zhang T, Song Z T, Feng S L and Chen B M 2007 Appl. Surf. Sci. 253 6125
[14] Del Frari D, Diliberto S, Stein N, Boulanger C and Lecuire J M 2005 Thin Solid Films 483 44
[15] Martin-Gonzalez M, Prieto A L, Gronsky R, Sands T and Stacy A M 2003 Adv. Mater. 15 1003
[16] Xiao F, Hangarter C, Yoo B Y, Rheem Y, Lee K H and Myung N V 2008 Elmctrochim. Acta 53 8103
[17] Park K, Xiao F, Yoo B Y, Rheem Y and Myung N V 2009 J. Alloys Compd. 485 362
[18] Yuan Q L, Nie Q L and Huo D X 2009 Current. Appl. Phys. 9 224
[19] Patil N S, Sargar A M, Mane S R and Bhosale P N 2008 Mater. Chem. Phys. 115 47
[20] Carmo J P, Goncalves L M and Correia J H 2009 Electron. Lett. 45 803
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