| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric |
| YANG Lu |
| National Key Laboratory for Electronic Measurement Technology, School of Information and Communication Engineering, North University of China, Taiyuan 030051 |
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| Cite this article: |
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YANG Lu 2010 Chin. Phys. Lett. 27 077102 |
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Abstract Deep-trap properties of high-dielectric-constant (k) HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8× 10-16 cm2 and 1.0× 1016 cm-3, respectively.
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| Keywords:
71.10.Ca
71.15.Qe
77.22.Ch
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Received: 20 July 2009
Published: 28 June 2010
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| PACS: |
71.10.Ca
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(Electron gas, Fermi gas)
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71.15.Qe
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(Excited states: methodology)
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77.22.Ch
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(Permittivity (dielectric function))
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