| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure |
LV Shi-Cheng1, GE Zhong-Yang1, ZHOU Yue1, XU Bo2, GAO Li-Gang2, YIN Jiang1, XIA Yi-Dong2, LIU Zhi-Guo2
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| 1 Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 2Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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LV Shi-Cheng, GE Zhong-Yang, ZHOU Yue et al 2010 Chin. Phys. Lett. 27 068502 |
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Abstract We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric multilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous (ZrO2)0.5(SiO2)0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. ZrO2 nanocrystals are precipitated from the phase separation of (ZrO2)0.8(SiO2)0.2 films annealed at 800\circC, and isolated from each other within the amorphous (ZrO2)0.5(SiO2)0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×1013/cm2.
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| Keywords:
85.16.Mk
85.30.-z
81.07.Bc
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Received: 31 December 2009
Published: 25 May 2010
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