| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling |
GONG Yue-Feng, SONG Zhi-Tang, LING Yun, LIU Yan, LI Yi-Jin |
| State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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GONG Yue-Feng, SONG Zhi-Tang, LING Yun et al 2010 Chin. Phys. Lett. 27 068501 |
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Abstract A three-dimensional finite element model for phase change random access memory is established to simulate electric, thermal and phase state distribution during (SET) operation. The model is applied to simulate the SET behaviors of the heater addition structure (HS) and the ring-type contact in the bottom electrode (RIB) structure. The simulation results indicate that the small bottom electrode contactor (BEC) is beneficial for heat efficiency and reliability in the HS cell, and the bottom electrode contactor with size Fx =80 nm is a good choice for the RIB cell. Also shown is that the appropriate SET pulse time is 100 ns for the low power consumption and fast operation.
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| Keywords:
85.50.-n
65.60.+a
73.61.Jc
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Received: 01 February 2010
Published: 25 May 2010
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| PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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65.60.+a
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(Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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[1] Maimon J, Spall E, Quinn R and Schnur S 2001 IEEE Proc. Aerospace Conference (Big Sky, MT 10-17 March 2001) p 2289
[2] Yi J H, Ha Y H et al 2003 IEEE Int. Electron. Device Meeting (Washington, DC 8-10 December 2003) p 901
[3] Lai S and Lowrey T 2001 IEEE Int. Electron. Devices Meeting (Washington, DC 2-05 December 2001) p 803
[4] Lai S 2003 Int. Electron. Devices Meeting (Washington, DC 8-10 December 2003) p 255
[5] Matsui Y, Kurotsuchi K et al 2006 IEEE Int. Tech. Dig. Int. Electron Devices Meeting (San Francisco, CA 11-13 December 2006) p 523
[6] Lee S Y, Choi K J et al 2006 Appl. Phys. Lett. 89 053517
[7] Cabral C et al 2007 Appl. Phys. Lett. 90 051908
[8] Song Y J et al 2005 Proc. European Solid State Device Research Conference (Grenoble, France 12-16 September 2005) p 513
[9] Gong Y F, Ling Y, Song Z T and Feng S L 2008 Chin. Phys. Lett. 25 3455
[10] Reifenberg J, Pop E, Gibby A, Wong S and Goodson K 2006 IEEE Int. Tenth Intersociety Conference on ITHERM (San Diego, CA 30 May-June 2 2006) p.106
[11] Senkader S and Wright C D 2004 J. Appl. Phys. 95 504
[12] Rao F, Song Z T et al 2007 Appl. Phys. Lett. 91 123511
[13] Rao F, Song Z T et al 2008 Nanotechnology 19 445706
[14] Kang D H, Ahn D H et al 2003 J. Appl. Phys. 94 3536
[15] Kim Y T et al 2005 Jpn. J. Appl. Phys. 44 2701
[16] Kang D, Kim I H et al 2006 J. Appl. Phys. 100 054506
[17] Yin Y, Sone H and Hosaka S 2006 Jpn. J. Appl. Phys. 45 6177
[18] Morales-Sanchez E, Prokhorov E F, Gonzalez-Hernandez J et al 2005 Thin Solid Films 471 243
[19] Zhang Y, Feng J et al 2005 Jpn. J. Appl. Phys. 44 1687
[20] Peng C, Cheng L and Mansuripur M 1997 J. Appl. Phys. 82 4183
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