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Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry |
ZHANG Ji-Tao1, LI Yan1, LUO Zhi-Yong2, WU Xue-Jian1
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| 1State Key Lab of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084 2National Institute of Metrology, Beijing 100013 |
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ZHANG Ji-Tao, LI Yan, LUO Zhi-Yong et al 2010 Chin. Phys. Lett. 27 050601 |
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Abstract One of the biggest obstacles to reduce the uncertainty of the Avogadro constant NA is such that there will be an oxide layers on the surface of a silicon sphere. The thickness of this layer is measured by a modified spectroscopic ellipsometer, which can eliminate the influence of the curved surface, and the results are calibrated by x-ray reflectivity. Fifty positions distributed nearly uniformly on the surface of the silicon sphere are measured twice. The results show that the mean thickness of the overall oxide layer is 3.75 nm with the standard uncertainty of 0.21 nm, which means that the relative uncertainty component of NA owing to this layer can be reduced to 1.2× 10-8.
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06.20.Jr
07.60.Fs
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Received: 27 October 2009
Published: 23 April 2010
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| PACS: |
06.20.Jr
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(Determination of fundamental constants)
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07.60.Fs
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(Polarimeters and ellipsometers)
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