| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser |
| JI Hai-Ming1, YANG Tao1, CAO Yu-Lian2, XU Peng-Fei1, GU Yong-Xian1, LIU Yu3, XIE Liang3, WANG Zhan-Guo1 |
| 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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JI Hai-Ming, YANG Tao, CAO Yu-Lian et al 2010 Chin. Phys. Lett. 27 034209 |
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Abstract We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50ºC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.
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| Keywords:
42.55.Px
42.60.Fc
78.67.Hc
81.15.Hi
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Received: 24 December 2009
Published: 09 March 2010
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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78.67.Hc
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(Quantum dots)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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