| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions |
| WANG He 1,2, LI Chun-Hong1, WANG Li-Juan1, WANG Hai-Bo1, YAN Dong-Hang1 |
| 1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222Graduate School of Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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WANG He, LI Chun-Hong, WANG Li-Juan et al 2010 Chin. Phys. Lett. 27 028502 |
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Abstract Flexible vanadyl-phthalocyanine (VOPc) thin-film transistors are fabricated by the weak epitaxy growth (WEG) method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.
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| Keywords:
85.30.Tv
81.40.Lm
68.60.Bs
81.05.Hd
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Received: 22 September 2009
Published: 08 February 2010
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| PACS: |
85.30.Tv
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(Field effect devices)
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81.40.Lm
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(Deformation, plasticity, and creep)
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68.60.Bs
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(Mechanical and acoustical properties)
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81.05.Hd
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(Other semiconductors)
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