| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy |
JI Hai-Ming1, YANG Tao1, CAO Yu-Lian2, XU Peng-Fei1, GU Yong-Xian1, MA Wen-Quan2, WANG Zhan-Guo1
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| 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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JI Hai-Ming, YANG Tao, CAO Yu-Lian et al 2010 Chin. Phys. Lett. 27 027801 |
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Abstract We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.
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| Keywords:
78.67.Hc
78.45.+h
73.40.Kp
81.07.Ta
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Received: 06 July 2009
Published: 08 February 2010
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| PACS: |
78.67.Hc
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(Quantum dots)
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78.45.+h
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(Stimulated emission)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.07.Ta
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(Quantum dots)
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