| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Substitution of Sm for Bi in BiFeO3 Thin Films Prepared by the Sol-Gel Method |
| HUANG Ning-Xiang1, ZHAO Li-Feng1, XU Jia-Yang1, CHEN Ji-Li1, ZHAO Yong1,2 |
| 1Key Laboratory of Advanced Materials (Ministry of Education), Superconductivity R&D Center (SRDC), Southwest Jiaotong University, Chengdu 6100312School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW, Australia |
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HUANG Ning-Xiang, ZHAO Li-Feng, XU Jia-Yang et al 2010 Chin. Phys. Lett. 27 027704 |
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Abstract Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si(100) substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.
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| Keywords:
77.80.-e
77.84.-s
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Received: 11 October 2009
Published: 08 February 2010
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| PACS: |
77.80.-e
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(Ferroelectricity and antiferroelectricity)
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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