| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices |
GANG Jian-Lei1,2, LI Song-Lin1, LIAO Zhao-Liang1, MENG Yang1, LIANG Xue-Jin1, CHEN Dong-Min1
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| 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Signal and Communication Research Institute, China Academy of RailwaySciences, Beijing 100081 |
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| Cite this article: |
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GANG Jian-Lei, LI Song-Lin, LIAO Zhao-Liang et al 2010 Chin. Phys. Lett. 27 027301 |
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Abstract Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.
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| Keywords:
73.40.Rw
73.40.Ns
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Received: 28 September 2009
Published: 08 February 2010
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| PACS: |
73.40.Rw
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(Metal-insulator-metal structures)
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73.40.Ns
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(Metal-nonmetal contacts)
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