| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate |
| WANG Wei1,2,3, MA Dong-Ge1 |
| 1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300123Graduate School of Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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WANG Wei, MA Dong-Ge 2010 Chin. Phys. Lett. 27 018503 |
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Abstract A nonvolatile memory effect was observed in an organic thin-film transistor by introducing a floating gate structure. The floating gate was composed of an Al film in a thickness of nanometers, which was thermally deposited on a SiO2 insulator and exposed to air to spontaneously oxidize. It can be seen that the transistors exhibit significant hysteresis behaviors and storage circles in current-voltage characteristics in the dark and under illumination, indicating that the transistors may act as a nonvolatile memory element. The operational mechanism is discussed in the cases of dark and illumination via charge trapping by the Al floating gate.
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| Keywords:
85.30.Tv
72.80.Le
85.25.Hv
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Received: 17 August 2009
Published: 30 December 2009
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| PACS: |
85.30.Tv
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(Field effect devices)
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72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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85.25.Hv
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(Superconducting logic elements and memory devices; microelectronic circuits)
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[1] Huitema H E A, Gelinck G H and Vander Puten J B P H 2001 Nature 414 599
[2]Crone B, Dodabalapur A et al 2000 Nature 403521
[3]Bach U, Lupo D et al 1998 Nature 395 583
[4]Zhu Z, Mason J T et al 2002 Appl. Phys. Lett. 81 4643
[5]Ma L P, Liu J and Yang Y 2002 Appl. Phys. Lett. 80 2997
[6]Bozano L D et al 2004 Appl. Phys. Lett. 84 607
[7]Ouyang J Y, Chu C W, Szmanda C R and Yang Y 2004 Nature Mater. 3 918
[8]Velu G, Legrand C, Tharaud O, Chapoton A, Remiens D andHorowitz G 2001 Appl. Phys. Lett. 79 659
[9]Unni K N N, Bettignies R, Dabos-Seignon S and Nunzi J M2004 Appl. Phys. Lett. 85 1823
[10]Naber R C G, Tanase C et al 2004 Nature Mater. 4 243
[11]Unni K N N, de Bettignies R, Dabos-Seignon S and Nunzi J M2005 Mater. Lett. 59 1165
[12]Naber R C G, de Boer B, Blom P W M and de Leeuw D M 2005 Appl. Phys. Lett. 87 203509
[13]Yildirim F A, Ucurum C, Schliewe R R, Bauhofer W, MeixnerR M, Goebel H and Krautschneider W 2004 Appl. Phys. Lett. 90 083501
[14]Schroeder R, Majewski L A and Grell M 2004 Adv.Mater. 16 633
[15]Singh Th B, Marjanovic N, Matt G J, Sariciffci N S,Schwodiauer R and Bauer S 2004 Appl. Phys. Lett. 85 5409
[16]Liu Z, Xue F, Su Y, Lvov Y M and Varahramyan K 2006 IEEE Trans. Nanotechnol. 5 379
[17]Zhen L, Guan W, Shang L, Liu M and Liu G 2008 J.Phys. D: Appl. Phys. 41 135111
[18]Auciello O, Scott J F and Ramesh R 1998 Phys. Today 51 22
[19]Chu C, Li S, Chen C, Shrotriya V and Yang Y 2005 Appl. Phys. Lett. 87 193508 |
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