CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films |
ZHANG Dong1,2, BAI Yi-Zhen1,2, QIN Fu-Wen1,2, BIAN Ji-Ming1, JIA Fu-Chao1,2, WU Zhan-Ling1,2, ZHAO Ji-Jun1,3, JIANG Xin2,4 |
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 1160242Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 1160243College of Advanced Science and Technology, Dalian University of Technology, Dalian 1160244Institute of Materials Engineering, University of Siegen, Paul-Bonatz-StraBe 9-11, D-57076 Siegen, Germany |
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Cite this article: |
ZHANG Dong, BAI Yi-Zhen, QIN Fu-Wen et al 2010 Chin. Phys. Lett. 27 018102 |
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Abstract Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.
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Keywords:
81.15.Gh. 68.55.J-
61.05.Cp
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Received: 25 September 2009
Published: 30 December 2009
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